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URL slug: rsic-wafer-boat-epitaxy
This RSiC wafer boat is optimized for epitaxy processes, made from recrystallized silicon carbide with a high-purity CVD SiC coating. It ensures ultra-low particle counts and excellent thermal conductivity, critical for uniform epitaxial growth.
| Parameter | Value |
|---|---|
| Material Substrate | RSiC (Recrystallized SiC) |
| Coating | CVD SiC |
| Max Working Temp | Up to 1600°C |
| Service Lifespan | >5x longer than quartz |
| Thermal Shock | Excellent (1000°C to RT) |
Model: SiC-01. Options: RSiC or SiSiC substrate, custom sizes, and precision slotting.
RSiC substrate with CVD SiC coating. Structure is a wafer carrier designed for batch processing in vertical/horizontal furnaces.
Specifically used in epitaxy processes in semiconductor manufacturing, supporting high-temperature and corrosive environments.
Custom dimensions, slot pitch, and coating options available to meet specific fab requirements.
In Asia-Pacific, a customer used 200 units per month for epitaxy. Achieved flawless mass production with ultra-low particle counts, increasing overall wafer yield by 2.5%.
A: The CVD SiC coating is high-density with ultra-high purity, ensuring low particle generation.
A: Yes, it has excellent thermal shock resistance.
A: RSiC is recrystallized, SiSiC is sintered; both offer similar high-temperature performance.
A: Yes, it is used in epitaxy processes which are part of MOCVD.
A: 1 unit.
A: Yes, custom dimensions are available.
Contact: Frank, sales05@semi-cera.com, +86 15957878134. MOQ: 1 unit. Delivery: EXW/FCA/DAP/DDP. Payment: 100% T/T for new, 70%+30% for long-term customers.
Image filename: rsic-wafer-boat-epitaxy.png. Alt text: RSiC wafer boat for epitaxy process.
