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القائمة

High Temperature MOCVD Multi-Pocket Wafer Susceptor Tray TaC Coating

جرد:
SKU: 3771253136
الطراز: CVD-02

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cvd-tac-coating-graphite-carrier-mocvd-susceptor

High Temperature MOCVD Multi-Pocket Wafer Susceptor Tray with CVD TaC Coating

CVD TaC coated graphite carrier for MOCVD multi-pocket wafer susceptor tray

This CVD TaC coating graphite carrier is designed for MOCVD multi-pocket wafer susceptor trays. It withstands ultra-high temperatures up to 2200°C, offers outstanding resistance to ammonia and hydrogen etching, and ensures contamination control for advanced semiconductor epitaxy processes.

Key Selling Points

  • Ultra-High Temperature Capability: Max operating temperature up to 2200°C, enabling use in demanding epitaxial reactors.
  • Chemical Resistance: Outstanding resistance to ammonia (NH3) and hydrogen (H2) etching, ensuring long-term stability.
  • Dense Coating Structure: Cubic tantalum carbide (TaC) matrix with typical coating thickness 25-45 um, for reliable protection.
  • High-Purity Base: CVD SiC + graphite material, providing low impurity and matched thermal expansion.
  • Proven Field Performance: Supported by cases showing reduced downtime and stable mass production.

Technical Specifications

Coating MaterialCubic tantalum carbide (TaC)
Coating ThicknessTypical 25-45 um
Max Operating TemperatureUp to 2200°C
Chemical ResistanceOutstanding resistance to NH3 and H2 etching
Base MaterialCVD SiC + graphite
ModelCVD-02

Models and Options

Model CVD-02, specifically configured as a multi-pocket wafer susceptor / tray.

Materials and Structure

Constructed from CVD SiC coated graphite with a cubic TaC coating, designed to match CTE with graphite and minimize carbon outgassing.

Applications

Semiconductor epitaxy process, including ultra-high temperature SiC/GaN epitaxial reactors and advanced MOCVD systems.

Customization

Custom sizes and configurations available upon request. Contact Semicera for specific requirements.

Case Study

Asia-Pacific Market (KR): 500 pcs per month, used for epitaxy process. Over 2 years under continuous high-temperature conditions, achieved stable mass production with consistent epitaxial layer quality; edge ring replacement frequency reduced by 20% due to high-density CVD coating and outstanding plasma resistance.

Europe Market (DE): 10000 units per year, to get high quality SiC crystal. Over 2 years, process downtime reduced by 15% with zero outgassing at 2000°C operation.

FAQ

What is the maximum operating temperature?

Up to 2200°C.

What coating thickness is typical?

25-45 microns.

Is it resistant to ammonia and hydrogen etching?

Yes, outstanding resistance.

What materials are used?

CVD SiC + graphite base with cubic TaC coating.

What is the MOQ?

1 unit.

What delivery methods are available?

EXW, FCA, DAP, DDP.

What is the payment term for new customers?

100% T/T in advance.

Inquiry Information

Contact: Frank | Email: sales05@semi-cera.com | Tel: +86 15957878134

Image

Image filename: cvd-tac-graphite-carrier-cvd-02-mocvd-susceptor.png

Alt text: CVD TaC coated graphite carrier for MOCVD multi-pocket wafer susceptor tray