Product Summary

This semiconductor graphite carrier is manufactured from high-purity isostatic graphite and coated with SiC to deliver exceptional performance in demanding wafer processing environments. Designed for a wide range of semiconductor processes, it meets the stringent requirements of the semiconductor industry.

Key Selling Points

• Ultra-Pure Material: Ash content ≤5 ppm ensures minimal contamination during wafer processing.
• Ultra-Fine Grain Structure: Grain size of 2-5 µm provides excellent surface finish and mechanical strength.
• High-Temperature Resistance: Isostatic graphite with a CTE of 4.0-4.6 x 10⁻⁶ K⁻¹ offers stability in thermal cycling.
• SiC Coating Protection: Coating enhances wear resistance and extends part lifetime.
• Machinability: Can be custom-machined to precise specifications for various wafer carrier designs.

Technical Specifications

Models and Options

Available in various configurations to suit different wafer carrier applications. Custom sizes and designs available upon request.

Materials and Structure

Made from high-purity isostatic graphite, this product features a SiC coating for enhanced durability. The ultra-fine grain provides a smooth surface, supporting consistent performance in high-temperature processes.

Applications

Ideal for use in ingot furnaces, epitaxial susceptor basements, and heaters within semiconductor manufacturing. Suitable for static or rotational hot-zone components requiring high thermal conductivity and machinability.

Customization

We offer custom machining to meet specific dimensional and design requirements. Contact us with your drawings for a tailored solution.

FAQ

Inquiry Information

For more details or to request a quote, please contact:

Email: sales05@semi-cera.com

Phone/WhatsApp: +86 15957878134

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